By Tony Chan Carusone, David A. Johns, Kenneth W. Martin

The second version of Analog built-in Circuit Design specializes in extra insurance approximately various kinds of circuits that experience elevated in value long ago decade. additionally, the textual content is stronger with fabric on CMOS IC gadget modeling, up to date processing format and extended insurance to mirror technical ideas. CMOS units and circuits have extra impression during this version in addition to a discounted volume of textual content on BiCMOS and bipolar details. New chapters contain subject matters on frequency reaction of analog ICs and easy concept of suggestions amplifiers.  

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Extra resources for Analog Integrated Circuit Design (2nd Edition)

Sample text

2 Chapter 1 • Integrated-Circuit Devices and Modelling MOS TRANSISTORS Presently, the most popular technology for realizing microcircuits makes use of MOS transistors. Unlike most bipolar junction transistor (BJT) technologies, which make dominant use of only one type of transistor (npn transistors in the case of BJT processes4), MOS circuits normally use two complementary types of transistors—n-channel and p-channel. While n-channel devices conduct with a positive gate voltage, p-channel devices conduct with a negative gate voltage.

However, most present CMOS technologies utilize polysilicon gates rather than metal gates. Before CMOS technology became widely available, most MOS processes made use of only n-channel transistors (NMOS). However, often two different types of n-channel transistors could be realized. One type, enhancement n-channel transistors, is similar to the n-channel transistors realized in CMOS technologies. Enhancement transistors require a positive gate-to-source voltage to conduct current. The other type, depletion transistors, conduct current with a gate-source voltage of 0 V.

Gate capacitances are also important when one is calculating charge injection, which occurs when a MOS transistor is being turned off because the channel charge, Q T-n , must flow from under the gate out through the terminals to other places in the circuit. Next, if the drain voltage is increased above 0 V, a drain-source potential difference exists. 7 The relationship between VDS and the drain-source current, ID, is the same as for a resistor, assuming VDS is small. 55) L where μ n is the mobility of electrons near the silicon surface, and Q n is the charge concentration of the channel per unit area (looking from the top down).

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