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Int. 3, 33 (1980). D. S. Perloff, T. F. Hasan, and E. R. Blome, Solid-State Technol. 23, 81 (1980). I. J. Stemp, K. H. Nicholas, and H. E. Brockman, IEEE Trans. Electron Devices ED-26, 729(1979). J. M. Hu, J. Appl. Phys. 40, 4413 (1969). K. G. Moerschel, C. W. Pearce, and R. E. Reusser, in "Semiconductor Silicon 1977" (H. R. Huff and E. ), p. 170, ECS, Princeton, New Jersey, 1977. B. Leroy and C. Plougonven, J. Electrochem. Soc. 127, 961 (1980). E. W. Hearn, E. H. Tekeat, and G. H. Schwuttke, Microelectron.

B. Seeds, IEEE Int. Electron Devices Meeting p. 12. , 1967. A. C. Ipri and J. C. Sarace, RCA Rev. 38, 323 (1977). J. Bernard, IEEE Trans. Electron Devices ED-25, 939 (1978). J. H. Lee, A. V. S. Satya, A. K. Ghatalia, and D. R. S. Patent 3, 983, 479 (1976). R. P. Cenker, D. G. Clemons, W. R. Huber, J. B. Petrizzi, F. J. Procyk, and G. M. Trout, IEEE Trans. Electron Devices ED-26, 853 (1979). J. W. Lathrop, R. S. Clark, J. E. Hull, and R. M. Jennings, Proc. IEEE 55, 1988 (1967). R. Aubusson and C.

91. 92. 93. 94. 95. 96. 97. 98. 99. 100. 101. 102. 103. 104. 105. 106. 107. 108. 109. 110. 111. 112. 113. 114. 115. 39 R. B. Seeds, IEEE Int. Electron Devices Meeting p. 12. , 1967. A. C. Ipri and J. C. Sarace, RCA Rev. 38, 323 (1977). J. Bernard, IEEE Trans. Electron Devices ED-25, 939 (1978). J. H. Lee, A. V. S. Satya, A. K. Ghatalia, and D. R. S. Patent 3, 983, 479 (1976). R. P. Cenker, D. G. Clemons, W. R. Huber, J. B. Petrizzi, F. J. Procyk, and G. M. Trout, IEEE Trans. Electron Devices ED-26, 853 (1979).

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